WEBINAR: Advantages of GaN and Silicon Carbide

Webinar: Where’s the Fit for GaN and SiC? – December 8


Tuesday, December 8, 2020
11:30 AM ET / 8:30 AM PT

System Performance Benefits from Using Power Supplies Made with Wide Bandgap Semiconductors

You’ve probably read about the wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), that are replacing silicon power devices including MOSFETs and IGBTs in some power converters. You’ve probably also read that the new wide bandgap devices can switch faster and more efficiently in power conversion circuits than their silicon cousins. How does that translate into performance benefits for users of power converters? This webinar will discuss the positioning of silicon and wideband gap power semiconductor devices in various power conversion applications and will take a look at the system-level benefits that you can expect to enjoy by specifying power converters made with wide bandgap semiconductors.

Attendees of this webinar will learn:

  • What is wideband gap? Why does it make a difference?
  • When do you use GaN? When do you use SiC?
  • Reliability of wideband gap supplies
  • Markets expected to have greatest impact in the near-term
  • Total Cost of Ownership


Featured Speakers:

Chris Hewitt
R&D Manager
Jeff Shepard
Contributing Writer
EE World Online

Philip Zuk
Vice President of Worldwide Technical Marketing & NA Sales
Guy Moxey
Senior Director
Wolfspeed Power



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