RESOURCES

WEBINAR: Modern Alternatives to Thyristor-Based Electronic Heater Controls


Traditionally, proportional control of electric heater elements is accomplished with thyristor (e.g., SCR or Triac) based electronic switches. While these can be effective in controlling the amount of heat delivered, they often present issues with power factor and harmonics presented to the utility power line, excessive electronic noise which can adversely affect other nearby equipment, as well as complex control requirements and increased control latency.

An alternate approach to controlling delivered power and heat, leveraging high-frequency switch mode technology, is presented in this session. Along with being an exact control method, this alternate approach addresses the performance issues of previous methods.

In this webinar you will learn the following:

  • Operational considerations of thyristor-based circuits
  • Opportunities for performance improvements with high-frequency switch mode
  • Performance comparison between both approaches

LEARN FROM THE EXPERTS

Gary Mulcahy
Gary Mulcahy, Chief Technology Officer at Astrodyne TDI

Gary Mulcahy is the Chief Technology Officer of Astrodyne TDI. He received his BE-EE from New York University followed by graduate study at the Polytechnic Institute of New York. With over 40 years of experience in high-value power conversion in the industrial, commercial, and military markets, Mr. Mulcahy is a recognized authority in power conversion technology and the design, development, and production of power systems for maximum performance and reliability with a minimal life cycle cost of ownership.

Chris Hewitt
Chris Hewitt, Director of R&D at Astrodyne TDI

Chris Hewitt received his BS from NJIT in Electrical Engineering. Chris has served the power electronics industry for over18 years. Making notable design contributions to Astrodyne TDI’s liquid-cooled family of products. As the lead to Astrodyne TDI's R&D department, Chris has in-depth knowledge of power electronics design and the usage of both SiC and GaN technologies.

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